vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (stud version), 200 a features ? center amplifying gate ? international standard case to-209ab (to-93) ? hermetic metal case wi th ceramic insulator ? (also available with glass-metal seal up to 1200 v) ? compression bonded encapsulation for heavy duty operations such as severe thermal cycling ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers ? ? electrical specifications product summary i t(av) 200 a v drm /v rrm 400 v,800 v, 1200 v, 1600 v, 2000 v v tm 1.75 v i gt 150 ma t j -40 c to 125 c package to-209ab (to-93) diode variation single scr to-209ab (to-93) major ratings and characteristics parameter test conditions values units i t(av) 200 a t c 85 c i t(rms) 314 a i tsm 50 hz 5000 a 60 hz 5230 i 2 t 50 hz 125 ka 2 s 60 hz 114 v drm /v rrm 400 to 2000 v t q typical 100 s t j -40 to 125 c voltage ratings type ? number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st180s 04 400 500 30 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100
vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 200 a 85 c maximum rms on-state current i t(rms) dc at 76 c case temperature 314 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 5000 t = 8.3 ms 5230 t = 10 ms 100 % v rrm ? reapplied 4200 t = 8.3 ms 4400 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 125 ka 2 s t = 8.3 ms 114 t = 10 ms 100 % v rrm ? reapplied 88 t = 8.3 ms 81 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1250 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.08 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.14 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.18 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 1.14 maximum on-state voltage v tm i pk = 570 a, t j = 125 c, t p = 10 ms sine pulse 1.75 v maximum holding current i h t j = t j maximum, anode supply 12 v resistive load 600 ma maximum (typical) latching current i l 1000 (300) switching parameter symbol test conditions values units maximum non-repetiti ve rate of rise ? of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s ? t j = t j maximum, anode voltage ? 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 300 a, t j = t j maximum, di/dt = 20 a/s, ? v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise ? of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and ? off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 30 ma
vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p ? 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ ? current/voltage are the lowest value which will trigger all units ? 12 v anode to cathode applied 180 - ma t j = 25 c 90 150 t j = 125 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.9 - v t j = 25 c 1.8 3.0 t j = 125 c 1.2 - dc gate current not to trigger i gd t j = t j maximum maximum gate cu rrent/voltage ? not to trigger is the maximum ? value which will not trigger any ? unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance, ? junction to case r thjc dc operation 0.105 k/w maximum thermal resistance, ? case to heatsink r thc-hs mounting surface, smooth, flat and greased 0.04 mounting torque, 10 % non-lubricated threads 31 (275) n m (lbf ?? in) lubricated threads 24.5 (210) approximate weight 280 g case style see dimensions - link at the end of datasheeet to-209ab (to-93) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.015 0.012 t j = t j maximum k/w 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060
vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 80 90 100 110 120 130 0 40 80 120 160 200 240 maximum allowable case t emperature (c) 30 60 90 120 180 avera ge on-sta te current (a) conduction angle st1 8 0 s se r i e s r (dc) = 0.105 k/ w thjc 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 dc 30 60 90 120 180 avera g e on-st a t e curre nt (a) maximum allowable case temperature (c) conduction period st1 8 0 s se r i e s r (dc) = 0.105 k/ w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 8 k / w - d e l t a r t h s a 0. 1 k/ w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 180 120 90 60 30 rm s lim it conduction angle maximum average on-state power loss (w) average on-state current (a) st1 8 0 s se r i e s t = 1 2 5 c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k/ w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 0 40 80 120 160 200 240 280 320 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st180s se rie s t = 1 2 5 c j
vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 2000 2400 2800 3200 3600 4000 4400 4800 110100 number of equal amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-state current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st1 8 0 s se r i e s at any rated load condition and with ra ted v ap plied following surg e. rrm 2000 2500 3000 3500 4000 4500 5000 5500 0.01 0.1 1 pulse tra in du ra t io n ( s) versus pulse train duration. control peak half sine wave on-state current (a) initial t = 125c no volta g e rea p p lied ra t e d v re a p p l i e d rrm j st180s series maximum non repetitive surge current of conduction may not be maintained. 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st1 8 0 s se r i e s 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st1 8 0 s se r i e s steady state value r = 0.105 k/ w (dc operation) thjc
vs-st180spbf series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 94397 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj = 2 5 c tj = 1 2 5 c tj = - 4 0 c (1) (2) (3) in st a n t a n e o u s g a t e c u r r e n t ( a ) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% ra ted di/ dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms d e v i c e : st1 8 0 s se r i e s (4) links to related documents dimensions www.vishay.com/doc?95082 - thyristor 2 - essential part number 3 - 0 = converter grade 4 10 9 - none = standard production - pbf = lead (pb)-free - s = compression bonding stud 8 - v = glass-metal seal (only up to 1200 v) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4"-16unf2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) none = ceramic housing (over 1200 v) note: for metric device m16 x 1.5 contact factory device code 5 1 3 2 4 6 7 8 9 10 st vs- 18 0 s 20 p 0 pbf - 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 05-mar-12 1 document number: 95082 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-209ab (to-93) dimensions in millimeters (inches) note (1) for metric device: m16 x 1.5 - length 21 (0.83) maximum fast-on terminals white shrink red shrink red cathode red silicon rubber 210 (8.26) 10 (0.39) c.s. 0.4 mm 2 (0.0006 s.i.) 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 38.5 (1.52) max. 16 (0.63) max. 8.5 (0.33) dia. glass metal seal 28.5 (1.12) max. dia. 220 (8.66) 10 (0.39) sw 32 c.s. 25 mm 2 (0.039 s.i.) flexible leads 4 (0.16) max. 35 (1.38) max. 3/4"-16unf-2a (1) 27.5 (1.08) max. white gate white shrink red shrink red cathode red silicon rubber 210 (8.26) 10 (0.39) c.s. 0.4 mm 2 (0.006 s.i.) 38.5 (1.52) max. 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. 35 (1.38) max. 3/4"-16unf-2a (1) 27.5 (1.08) max. sw 32 27.5 (1.08) max. dia. white gate 16 (0.63) max. amp. 280000-1 ref-250 9.5 (0.37) min. 22 (0.86) min. c.s. 25 mm 2 (0.039 s.i.) flexible leads 4 (0.16) max. 9.5 (0.37) min. 22 (0.86) min.
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